APT6060BNR-BUTT datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  APT6060BNR-BUTT
• Производитель
  Microsemi Corporation
• Описание
  Microsemi Corporation APT6060BNR-BUTT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 13 A DS Breakdown Voltage-Min: 600 V Avalanche Energy Rating (Eas): 800 mJ Drain-source On Resistance-Max: 0.6000 ohm Pulsed Drain Current-Max (IDM): 52 A
• Количество страниц
  2 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  82,67 KB

APT6060BNR-BUTT datasheet скачать

APT6060BNR-BUTT datasheet